搜索结果: 1-1 共查到“理学 InAs Vertical”相关记录1条 . 查询时间(0.081 秒)
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance
InAs Vertical Lateral Band-to-Band Tunneling Transistors
font style='font-size:12px;'>
2010/11/23
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap...