搜索结果: 1-15 共查到“物理学 InGaAs”相关记录17条 . 查询时间(0.218 秒)
“高性能近红外InGaAs探测材料基础研究及其航天应用验证”项目召开专题学术研讨会（图）
高性能近红外InGaAs探测材料基础研究及其航天应用验证 项目 专题学术研讨会
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2014/4/4
2014年3月26日，973计划“高性能近红外InGaAs探测材料基础研究及其航天应用验证”项目“材料生长理论与控制”专题学术研讨会在宁召开。973计划领域咨询组郑有炓院士，项目责任专家吕惠宾研究员，项目顾问组专家匡定波院士、方家熊院士，首席科学家兼课题负责人龚海梅研究员，项目专家组成员罗豪甦研究员和韩平教授，特邀专家“千人计划”闫锋教授及课题负责人缪国庆研究员、张永刚研究员、韦欣研究员及学术骨干...
高功率InGaAs/GaAsP应变量子阱垂直腔面发射激光器列阵
垂直腔面发射激光器列阵 峰值功率 功率密度 InGaAs/GaAsP应变量子阱
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2014/3/21
为提高垂直腔面发射激光器(VCSEL)的输出功率,对具有3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱结构,发射波长为977 nm的VCSEL列阵进行了研究。对量子阱结构进行了优化,选择具有更宽带隙的GaAsP作为势垒材料,计算了In0.2Ga0.8As/GaAs0.92P0.08量子阱的带阶。对采用In0.2Ga0.8As/GaAs0.92P0.08和In0.2Ga0.8As...
Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs
Anisotropic ultrafast electron dynamics high-field terahertz pulses
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2010/11/23
The anisotropic effective mass of electrons is directly measured using time-resolved THz-
pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory
is used to attri...
Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Group-III assisted catalyst-free growth InGaAs nanowires quantum dots
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2010/11/25
Growth of GaAs and InxGa1xAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the ind...
上海技术物理研究所InGaAs/InP APD结构的SCM研究获进展
上海技术物理研究所 InGaAs/InP APD结构 SCM
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2009/11/26
近日，中国科学院上海技术物理研究所有关InGaAs/InP 雪崩二极管（APD）结构的扫描电容显微方法（SCM）研究工作发表在《应用物理快报》（Applied Physics Letters）上（59卷, 093506），该工作得到了技物所三期创新项目资助。
Voltage controlled nuclear polarization switching in a single InGaAs quantum dot
Voltage nuclear polarization a single InGaAs quantum dot
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2010/4/8
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias...
Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition
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2007/7/28
期刊信息
篇名
Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition
语种
英文
撰写或编译
撰写
作者
Jun He*,Xiao-Dong Wang,Bo Xu,Zhanguo Wang and Sheng-Ch...
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
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2007/7/28
期刊信息
篇名
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
语种
英文
撰写或编译
撰写
作者
Z. Y. Zhang*,C. L. Yang,Y. Q. Wei,X ....
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer
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2007/7/28
期刊信息
篇名
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer
语种
英文
撰写或编译
撰写
作者
Z.Y. Zhang*,B. Xu,P. Jin,X.Q. Meng,Ch.M. Li,X.L.Ye,Z.G. Wang
第...
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
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2007/7/28
期刊信息
篇名
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
语种
英文
撰写或编译
撰写
作者
Z.Y. Zhang*,B. Xu,P. Jin,X.Q. Meng,Ch.M. Li,X.L.Ye,D.B. Li Z.G. Wang
第一作者单位
I...
1.78μm strained InGaAs-InGaAsP -InP distributed feedback quantum well lasers
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2007/7/28
期刊信息
篇名
1.78μm strained InGaAs-InGaAsP -InP distributed feedback quantum well lasers
语种
英文
撰写或编译
作者
Shurong Wang,Wang hui,Wang baojun,Zhu Hongliang,Zhang jing,Ding ying,Zhao lingjuan,Zhou fan,Wang luf...
Compressively Strained InGaAs / InGaAsP Quantum Well Distributed Feedback Laser at 1.74 micron
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2007/7/28
期刊信息
篇名
Compressively Strained InGaAs / InGaAsP Quantum Well Distributed Feedback Laser at 1.74 micron
语种
英文
撰写或编译
作者
Pan Jiao-Qing,Wang Wei,Zhu Hong-Liang,Zhao Qian,Wang Bao-Jun,Zhou Fan,Wang Lu-Feng...
Evidence of the Miniband Formation in InGaAs/InP Superlattices
Superlattices Plasmons Raman scattering
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2010/9/25
The formation of the miniband electron energy structure was explored in doped InGaAs=InP superlattices with different periods. The analysis of the Raman data allowed us to conclude that in spite of th...
Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices
Spin-Dependent Conductance Nonmagnetic InGaAs Asymmetric Double Barrier Devices
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2010/10/21
The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k¢p and envelope function approximations. The spin-dependent transmission prob...
High-power InGaAs VCSEL’s single devices and 2-D arrays
VCSEL's 2-D arrays quantum well high power 980 nm
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2011/12/15
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL’s) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 50...