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“InN-基全太阳光谱光伏材料的分子束外延生长和物性研究”获得市光科技计划资助
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2007/8/9
近日，我所陈平平博士提出的“InN-基全太阳光谱光伏材料的分子束外延生长和物性研究”获得2004年上海市光科技计划资助。InN及InGaN(富In)半导体是当今半导体领域研究热点,由于该材料体系很难生长，一直来对于其基本的物理性质如缺少认识。最近的研究表明该InGaN材料体系能带从0.7到3.4eV连续可调，为全太阳光谱光伏材料体系，理论研究表明由该材料制备的太阳能电池效率高于50%（高于目前所有...
Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
GaN InN Nanowires Electron transport
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2010/9/25
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gal...
Band Gap of Cubic AlN, GaN and InN Compounds Under Pressure
Lattice parameter bulk modulus pressure coefficient FP-LAPW, WIEN(2k)
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2010/4/9
Numerical simulation based on FP-LAPW calculations is applied to study the lattice parameters, bulk modulus and band gap energy of zinc blende binaries AlN, GaN and InN under hydrostatic pressure. The...
Initial Growth of GaN and InN Over GaAs (110) Substrates
GaN InN GaAs (110) Substrates
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2010/10/21
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density fun...