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We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal hone...
Mesoscopic admittance of a double quantum dot      Mesoscopic admittance  double quantum dot        font style='font-size:12px;'> 2010/11/17
We calculate the mesoscopic admittance G(!) of a double quantum dot, which can be measured directly using microwave techniques. This quantity shows a rich behavior. In particular, it is directly sens...
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
In mesoscopic systems with spin-orbit coupling, spin-injection into quantum dots at zero magnetic eld is expected under a wide range of conditions. However, up to now, a viable approach for experimen...
Semiconductor quantum dots have been a subject of intensive investigation over last two decades. One reason is the proposal [1] to use spin state of electron in a quantum dot as a quantum bit of inf...
Kondo and Fano Effect in Side Attached Double Quantum-Dot Molecule     Quantum dots  Kondo effect  Fano effect       font style='font-size:12px;'> 2010/9/25
Electron tunneling through a double quantum dot molecule side attached to a quantum wire, in the Kondo regime, is studied. The mean-field finite-U slave-boson formalism is used to obtain the solution ...

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