搜索结果: 1-13 共查到“凝聚态物理学 Ga”相关记录13条 . 查询时间(0.185 秒)
中国科学院半导体研究所在(Ga,Mn)As磁性半导体研究方面取得进展
中国科学院半导体研究所 (Ga,Mn)As 磁性半导体 进展
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2013/7/15
2013年7月9日，《物理评论快报》 (Phys. Rev. Lett.111, 027203 2013)报道了中科院半导体研究所半导体超晶格国家重点实验室赵建华研究组及合作者在(Ga,Mn)As/Co2FeAl双层膜铁磁界面耦合和磁邻近效应方面取得的最新研究成果。
Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
exchange interactions exciton magnetospectroscopy
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2010/11/25
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1−xMnxN, x . 1%,grow...
Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field
Atomistic theory spin relaxation zero magnetic field
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2010/11/25
We present full atomistic calculations of the spin-flip time (T1) of electrons and holes mediated by acoustic phonons in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field. At lo...
Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films
Element specific characterization heterogeneous magnetism
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2010/11/18
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy
constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photo-
electro...
Fabrication and characterization of a Ni-Mn-Ga uniaxially textured freestanding film deposited by DC magnetron sputtering
DC magnetron sputtering freestanding Ni-Mn-Ga thick film martensitic transformation
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2010/11/22
Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-...
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
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2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Conduction of DNA molecules attached to a disconnected array of metallic Ga nanoparticles
Conduction of DNA molecules disconnected array of metallic Ga nanoparticles
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2010/11/17
We have investigated the conduction over a wide range of temperature of DNA molecules deposited across slits etched through a few nanometers thick platinum lm. The slits are insulating before DNA d...
Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Magnetic shape memory alloys epitaxial films adaptive modulated-martensites twinning
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2010/11/19
order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distributi...
用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As1-xPx]合金)
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2007/12/12
用赝势微扰法计算了GaAs,GaP和Ga[As1-xPx]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20％,50％和80％时Ga[As1-xPx]合金的能带。当GaP含量为41％时,直接能隙和间接能隙相等,这一数值刚好是Spitzer...
Effects of Disorder on the Exchange Coupling in (Ga,Mn)As Diluted Magnetic Semiconductors
Disorder Exchange coupling Diluted magnetic semiconductors
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2010/8/26
A theoretical study of the effects of disorder on the Mn-Mn exchange interactions for Ga1¡xMnxAs diluted magnetic semiconductors is presented. The disorder is intrinsically considered in the cal...
Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films
CIGS Solar cells XRD AES
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2010/9/29
This work presents results related with phase identification and study of the homogeneity in the chemical composition of Cu(In,Ga)Se2 (CIGS) thin films grown by a chemical reaction of the precursor sp...
The Absorption Properties of p-Type TlInx Ga(1-x) Se2 and TlGaSe2
TlGaSe2 TlIn0.3Ga0.7Se2 TlIn0.5Ga0.5Se2 single crystals absorption binding energy phase transition
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2010/4/15
p-TlGaSe2, p-TlIn0.3Ga0.7Se2 and p-TlIn0.5Ga0.5Se2 single crystals were grown by the modified Bridgman-Stockbarger method in our crystal growth laboratory. The absorption measurements were carried out...
Doping Effects of Ga And Te On The Kinetic Coefficients of Rhombohedral And Cubic Phases Of Ge1-x Gax Te Solid Solution Alloys
Doping Effects Ga Te Ge1-x Gax Te Solid Solution Alloys
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2010/4/16
this study Ga and Te doping effects on the kinetic parameters (thermo e.m.f., electrical conductivity, heat conductivity, Hall and Nernst-Ettingshausen coefficients) of the rhombohedral and cubic phas...