搜索结果: 1-1 共查到“半导体物理学 Kinetics”相关记录1条 . 查询时间(0.093 秒)
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Bond-specific reaction kinetics oxidation of (111) Si Effect of n-type doping
font style='font-size:12px;'>
2010/11/24
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not...