搜索结果: 1-5 共查到“半导体物理学 SiC”相关记录5条 . 查询时间(0.141 秒)
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Ballistic transport frequency response Steady-state Drain current
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2010/7/5
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters...
SiC晶体缺陷的阴极荧光无损表征研究
阴极荧光 4H-SiC 无损表征 位错及堆垛层错
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2010/5/4
由于在研究SiC晶体缺陷对器件性能的影响的过程中，表征材料缺陷的常用的方法是破坏性的，因此寻找一种无损的测试方法对缺陷进行有效的表征显得尤为重要。基于阴极荧光(CL)的工作原理对4H-SiC同质外延材料的晶体缺陷进行了无损测试研究。结果发现利用阴极荧光可以观测到晶体内部的堆垛层错、刃位错和螺位错以及基面位错，其阴极荧光图中的形貌分别为直角三角形、点状和短棒状。因此该方法成为SiC晶体缺陷的无损表征...
七种新的SiC六方多型体
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2007/12/12
本文提出了用X射线劳埃法鉴定SiC六方多型体类型的方法。在详细地研究了xH类型与基本类型6H,15R和4H的倒易阵点间相互配置关系的基础上,推导出了这些具体关系,这种关系对于xH—6H来说仅有十二种,对于xH—15R仅有三十种,对于xH—4H仅有八种。上述的点间关系表和推求xH类型单位晶胞密堆积层数的公式同样可以普遍适用于以其他X射线照相法鉴定SiC六方多型体类型的工作中。用本文所提出的方法研究了...
Pseudopotential-Based Full Zone k . p Technique for Indirect Bandgap Semiconductors: Si, Ge, Diamond and SiC
Band structure indirect bandgap semiconductors pseudopotentials
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2010/4/9
The k . p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands ...
Numerical Simulation of the Optical Properties of SiC/SiO2 Quantum Dots
Numerical Simulation the Optical Properties SiC/SiO2 Quantum Dots
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2010/10/21
We perform a theoretical investigation of the absorption and emission properties of quantum confined SiC/SiO2 spherical quantum dots, focusing on the the size-dependent emission and absorption spectra...