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In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation          font style='font-size:12px;'> 2011/11/18
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
This paper presents the results of research of Cu/Ni multilayers magnetron-deposited on an Si (100) substrate. The thickness of Cu sublayers was identical in all multilayers and equalled 2 nm. The th...
Uncertainty of atomic force microscopy measurements     uncertainty of measurement       font style='font-size:12px;'> 2011/5/4
We consider the problem of uncertainty in geometrically linear measurements in scanning probe microscopy (SPM) represented by atomic force microscopy (AFM). The uncertainties under consideration are a...

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