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半导体国际知名媒体专题报道电子科技大学微电子与固体电子学院张波教授团队GaN-on-Si功率器件研究成果(图)
电子科技大学微电子与固体电子学院 张波教授团队 GaN-on-Si功率器件
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2016/1/26
近日,电子科技大学微电子与固体电子学院张波教授带领的功率集成技术实验室团队在微电子器件顶级期刊《IEEE Electron Device Letters》上发表题为“7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering”(界面电荷...
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
n-Si Annealing Cooling rate J–V plots SEM
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2010/12/7
The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The...