搜索结果: 16-30 共查到“知识库 高压物理学”相关记录46条 . 查询时间(1.609 秒)
隔离开关操作速度对特快速瞬态过电压的影响
特高压 特快速瞬态过电压 气体绝缘开关设备 隔离开关
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2012/7/2
气体绝缘开关设备(gas insulated switchgear，GIS)内的隔离开关在操作空载短母线时会发生多次击穿，并产生特快速瞬态过电压(very fast transient overvoltage，VFTO)，严重时可能造成变压器和其他电气设备的损坏。隔离开关的操作速度是影响VFTO的重要因素之一，对此国内外有不同看法。在仿真研究中考虑了隔离开关操作过程中的多次重击穿、间隙击穿电压的极...
气体绝缘开关设备中特快速瞬态过电压的全过程测量方法
特高压 气体绝缘开关设备 特快速瞬态过电压 电容传感器 阻抗匹配 阻抗变换
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2012/7/2
特快速瞬态过电压(very fast transient overvoltages，VFTO)是超/特高压气体绝缘开关设备(gas insulated switchgear，GIS)设计和运行中十分关心的问题，试验研究VFTO的特性是非常必要的。VFTO包含特快速瞬态分量、工频分量和准直流分量(空载母线残余电荷电压)，其中VFTO的瞬态分量在GIS中以电压波的形式传播，致使不同位置的VFTO波形具...
特高压气体绝缘开关设备中特快速瞬态过电压特性的试验研究
特高压 气体绝缘开关设备 特快速瞬态过电压 波形特性 概率特性 阻尼电阻
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2012/7/2
气体绝缘开关设备(gas insulated switchgear，GIS)中隔离开关操作产生的特快速瞬态过电压(very fast transient overvoltage，VFTO)会影响电气设备的安全运行，随着系统电压等级的提高，该影响会越来越严重，在特高压系统中尤为突出。为掌握特高压GIS的VFTO特性，在特高压GIS设备的VFTO试验回路进行了大规模GIS隔离开关操作试验，并对VFTO...
气体绝缘开关设备中特快速瞬态过电压研究的新进展
特高压 气体绝缘开关设备 特快速瞬态过电压 暂态壳体电位 隔离开关 电磁干扰
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2012/7/2
气体绝缘开关设备(gas insulated switchgear，GIS)中的隔离开关操作空载短母线会产生陡波前、高幅值的特快速瞬态过电压(very fast transient overvoltage，VFTO)、瞬态壳体电位和电磁干扰，对GIS及其连接的具有绕组的设备、与壳体连接的二次设备绝缘产生危害，干扰二次设备工作，严重影响设备的安全运行。对2009年前国内外在VFTO测量方法、特性试验...
Sieving hydrogen based on its high compressibility
Sieving hydrogen high compressibility
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2010/11/19
A molecular sieve for hydrogen is presented based on a carbon nanotube intramolecular junction and a C60. The small interspace formed between C60 and junction provides a size changeable channel for th...
Contour lines of the discrete scale invariant rough surfaces
Contour lines discrete scale invariant rough surfaces
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2010/11/18
We study the fractal properties of the 2d discrete scale invariant (DSI) rough surfaces.
The contour lines of these rough surfaces show clear DSI. In the appropriate limit the
DSI surfaces converge ...
Voltage controlled spin precession in InAs quantum wells
Voltage controlled spin InAs quantum wells
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2010/11/18
In this work we demonstrate that the device presented by Koo et al. [Science 325, 1515 (2009)]
in InAs quantum wells has indeed realized the Datta-Das spin-injected field effect transistor. The oscil...
Pressure-temperature phase diagram of charge ordering in Nd1/2Sr1/2MnO3
Pressure-temperature phase diagram Nd1/2Sr1/2MnO3
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2010/11/17
We observe how the charge-ordering temperature TCO of Nd1/2Sr1/2MnO3 decreases with the external pressure p from 160 K at p = 0 down to 30 K at p ≃ 4.5 GPa, by measuring the
values p, T where t...
Non-boost-invariant anisotropic dynamics
Non-Boost-Invariant Dynamics Anisotropic Plasma Non-equilibrium
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2011/1/6
We study the non-boost-invariant evolution of a quark-gluon plasma subject to large earlytime
momentum-space anisotropies. Rather than using the canonical hydrodynamical expansion of the distribution...
Piezoresistance in silicon up to 3 GPa
Piezoresistance silicon up to 3 GPa
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2010/11/22
The room-temperature longitudinal piezoresistance of n-type and p-type silicon along selected
crystal axes has been investigated under uniaxial compressive stresses up to 3 GPa. While the
conductanc...
The imbalanced Fermi gas at unitarity
The imbalanced Fermi gas unitarity
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2010/11/17
Lattice field theory is a useful tool for studying strongly interacting theories in condensed matter physics. A prominent example is the unitary Fermi gas: a two-component system of fermions interacti...
The role of correlations in the high-pressure phase of FeSe
role of correlations high-pressure phase of FeSe
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2010/11/18
We present a systematic study of the high-pressure FeSe phase performed by means of the firstprinciple electronic structure calculations. Basing on available experimental information about the unit ce...
表面修饰二氧化锡纳米微晶的制备与表征
二氧化锡纳米微晶 硅烷偶联剂KH-570 X射线光电子能谱 表面修饰 结合能
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2009/11/26
制备了硅烷偶联剂KH-570表面修饰的SnO2纳米微晶，通过FT-IR、XPS、TEM和TG-DTA对其结构和表面特性进行表征和研究. FT-IR和XPS分析结果确证了KH-570与SnO2表面是以化学键合或物理吸附方式相结合,粒子表面存在酯基等有机官能团的红外吸收特征；观测到KH-570中Si原子的Si2s和Si2p谱线. TEM分析表明，表面修饰反应增强了SnO2纳米微晶的疏水性和分散性.由X...
水合氢离子团簇从头算和ABEEM/MM的理论研究
水合氢离子 从头计算方法 ABEEM/MM模型
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2009/11/25
本文应用高水平的从头计算方法和ABEEM/MM模型，研究了水合氢离子团簇H3O+(H2O)n(n=1-6)，优化得到了低能构象，探讨了其结合能和稳定性，显示出H3O+(H2O)3局域结构的优势存在，并对H3O+(H2O)6Ⅵa团簇的ABEEM电荷分布进行分析．结果表明，ABEEM/MM方法计算的结果和从头算得到的结果存在很好的一致性．
钼铅矿的压致相变研究
wulfenite high-pressure phase transition synchrotron radiation X-ray diffraction
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2009/10/10
The in-situ high-pressure structures of wulfenite have been investigated by means of angular dispersive X-ray diffraction with diamond anvil cell and synchrotron radiation. In the pressure up to 22.9 ...