搜索结果: 1-15 共查到“理学 GaAs”相关记录91条 . 查询时间(0.125 秒)
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究
GaAs/AlGaAs 量子阱 热红外 转换焦 平面材料
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2023/8/31
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究。
GaAs微尖上碳纳米管的制备
碳纳米管 热化学气相沉积 GaAs 选择液相外延
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2013/9/28
采用热化学气相沉积的方法在选择性液相外延方法制备的GaAs微尖上生长碳纳米管。利用扫描电子显微镜以及拉曼光谱对生长的碳纳米管进行表征。结果表明:GaAs微尖在高温下重新结晶成条状梯形GaAs阵列,生长的碳纳米管连接在相邻的GaAs阵列之间,形态规整,具有较好的石墨微晶结构。在此基础上,提出在微尖上生长纳米管的模型,为实现微纳器件互联提供了一种新方法。
基于GaAs MMIC技术的残余应力测试结构的模拟与设计
GaAs 残余应力 应力梯度 实验验证
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2014/4/23
残余应力对开关梁的力学特性有着重要的影响。梁的弹性系数k由梁的形状和材料特性（杨氏模量和残余应力）来决定。应力梯度会使悬臂梁发生卷曲，对k也会产生影响。由残余应力引起的梁的长度变化量在微米级别，一般实验仪器难于测量。基于GaAs基和Si基的器件残余应力不同，相应的测试结构需重新设计。为了克服这些问题，本论文重新模拟并优化了微旋转式残余应变测试结构，尽量简化对测试仪器的要求。本文使用Intellis...
太赫兹场作用下的GaAs 双量子阱的光吸收分析
光吸收谱 量子阱 太赫兹
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2012/11/23
用密度矩阵理论分析了在超快脉冲及太赫兹场作用下GaAs量子阱和双量子阱的光吸收谱.分析表明：在直流和太赫兹场作用下，由于量子约束斯塔克效应，光吸收谱呈现出多个激子吸收峰.改变太赫兹的强度和频率，吸收谱出现恶歇分裂，并产生边带，这些分裂主要来源于太赫兹作用下激子的非线性效应.
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Direct correlation of crystal structure optical properties
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2010/11/25
A novel method for the direct correlation at the nanoscale of structural and optical properties
of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zi...
Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
Electric-field Manipulation Self-assembled Quantum Dots
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2010/11/25
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum
dots is calculated using multiband real-space envelope-function theory. The dependence of the Land´...
Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field
Atomistic theory spin relaxation zero magnetic field
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2010/11/25
We present full atomistic calculations of the spin-flip time (T1) of electrons and holes mediated by acoustic phonons in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field. At lo...
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
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2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Spin orbital mechanisms of the magneto-gyrotropic photogalvanic effects
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2010/11/24
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE)in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Land´e-factor g...
Electronic correlations in short period (CrAs)$_n$/(GaAs)$_n$ ferromagnetic heterostructures
Electronic correlations ferromagnetic heterostructures
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2010/11/24
We investigate half-metallicity in [001] stacked (CrAs)n/(GaAs)n heterostructures with n ≤ 3
by means of a combined many-body and electronic structure calculation. Interface states in the
presence o...
Cotunneling effects in GaAs vertical double quantum dot
Cotunneling effects GaAs vertical double quantum dot
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2010/11/24
Semiconductor quantum dots have been a subject of intensive investigation over last two
decades. One reason is the proposal [1] to use spin state of electron in a quantum dot as a
quantum bit of inf...
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Non-linear behavior of Eg(T) Zero-point energy Temperature dependence of the gap Gallium arsenide
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2010/6/30
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigati...
Effects of Electron Back-scattering in Observations of Cross-sectioned GaAs/AlAs Superlattice with Auger Electron Spectroscopy
Effects Electron Back-scattering Observations Cross-sectioned GaAs/AlAs Superlattice Auger Electron Spectroscopy
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2010/9/17
Cross-sections of GaAs/AlAs thin films prepared by cleavage of MBE-grown superlattices have been analyzed with Auger electron spectroscopy with a spatial resolution of 6 nm. Elemental distributions o...
ZnSe/GaAs/电解液光电化学特性的研究
ZnSe/GaAs半导体电极 光谱响应 能量转换 太阳电池
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2009/12/8
ZnSe/GaAs/电解液光电化学特性的研究。
应用约束刻蚀剂层技术(CELT)对GaAs进行电化学微加工. 研究了刻蚀溶液体系中各组成的浓度比例、GaAs类型、掺杂以及阳极腐蚀过程对GaAs刻蚀加工过程的影响. 循环伏安实验表明, Br-可以通过电化学反应生成Br2作为刻蚀剂, L-胱氨酸可作为有效的捕捉剂. CELT中刻蚀剂层被紧紧束缚于模板表面, 模板和工件之间的距离小于刻蚀剂层的厚度时, 刻蚀剂可以对GaAs进行加工. 利用表面具有微凸...