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搜索结果: 1-13 共查到物理学 Electron transport相关记录13条 . 查询时间(0.109 秒)
Motivated by recent experiments of successfully carving out stable carbon atomic chains from graphene [Meyer et al. Nature (London) 454, 319 (2008); Jin et al. Phys. Rev. Lett. 102, 205501 (2009)] we ...
Quantum transmission spectra of a twisted electron waveguide expose the coupling between traveling and quasi-bound states. Through a direct numerical solution of the open-boundary Schr\"odinger equati...
Early work on the iron-arsenide compounds supported the view, that a reduced dimensionality might be a necessary prerequisite for high–Tc superconductivity. Later, however, it was found that the zero-...
The effect of dephasing on electron transport through a benzene molecule is carefully examined using a phenomenological model introduced by B¨uttiker. Within a tight-binding framework all the calcula...
We present a time-saving simulator within the framework of the density functional theory to calculate the transport properties of electrons through nanostructures suspended between semiinfinite elect...
2001Vol.35No.2pp.207-212DOI: Electron Transport Behavior in a Mirror Magnetic Field and a Non-uniform Electric Field LIU Yan-Hong, LIU Zu-Li, YAO Kai-Lun, WEI He-Lin and LIU Hong-...
2002Vol.38No.3pp.370-374DOI: Classical Theory of Hot-Electron Transport in Electric and Magnetic Fields WENG Ming-Qi and WU Hang-Sheng Department of Physics, Universi...
2005Vol.43No.4pp.749-752DOI: Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula Rong1 and ZHANG Guang-Ming1,2 1 Center for Advanced Study...
2004Vol.41No.1pp.123-126DOI: Electron Transport Through Double-Dot Aharonov-Bohm Interferometer in the Kondo Regime DING Guo-Hui, YUAN Qing-Xin, and XU Bo-Wei Departmen...
Modern semiconductor technologies have made possible special devices in which a gradual dimensional crossover may be induced by means of applied electric fields. Two specific examples are described. T...
Electron Transport Mechanism in GaN/AlGaN HEMT Structures     GaN  Momentum Relaxation  LO Phonon Scattering       font style='font-size:12px;'> 2010/4/13
The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall...
Transport properties of indium antimonide in an electric field have been calculated at 77 K. The calculation shows that ionized impurity scattering plays a dominant role in InSb at low electric field....
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...

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