搜索结果: 1-6 共查到“理论物理学 InGaAs”相关记录6条 . 查询时间(0.078 秒)
Voltage controlled nuclear polarization switching in a single InGaAs quantum dot
Voltage nuclear polarization a single InGaAs quantum dot
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2010/4/8
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias...
Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition
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2007/7/28
期刊信息
篇名
Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition
语种
英文
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撰写
作者
Jun He*,Xiao-Dong Wang,Bo Xu,Zhanguo Wang and Sheng-Ch...
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
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2007/7/28
期刊信息
篇名
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
语种
英文
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撰写
作者
Z. Y. Zhang*,C. L. Yang,Y. Q. Wei,X ....
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer
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2007/7/28
期刊信息
篇名
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer
语种
英文
撰写或编译
撰写
作者
Z.Y. Zhang*,B. Xu,P. Jin,X.Q. Meng,Ch.M. Li,X.L.Ye,Z.G. Wang
第...
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
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2007/7/28
期刊信息
篇名
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
语种
英文
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撰写
作者
Z.Y. Zhang*,B. Xu,P. Jin,X.Q. Meng,Ch.M. Li,X.L.Ye,D.B. Li Z.G. Wang
第一作者单位
I...
Compressively Strained InGaAs / InGaAsP Quantum Well Distributed Feedback Laser at 1.74 micron
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2007/7/28
期刊信息
篇名
Compressively Strained InGaAs / InGaAsP Quantum Well Distributed Feedback Laser at 1.74 micron
语种
英文
撰写或编译
作者
Pan Jiao-Qing,Wang Wei,Zhu Hong-Liang,Zhao Qian,Wang Bao-Jun,Zhou Fan,Wang Lu-Feng...