搜索结果: 1-6 共查到“凝聚态物理学 Laser”相关记录6条 . 查询时间(0.162 秒)
Three dimensional optical manipulation and structural imaging of soft materials by use of laser tweezers and multimodal nonlinear microscopy
Liquid crystals Optical tweezers or optical manipulation Nonlinear microscopy
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2010/11/24
We develop an integrated system of holographic optical trapping and multimodal nonlinear microscopy and perform simultaneous three-dimensional optical manipulation and non-invasive structural imaging ...
Continuous atom laser with Bose-Einstein condensates involving three-body interactions
atom laser Bose-Einstein condensates three-body interactions
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2010/4/2
We demonstrate, through numerical simulations, the emission of a coherent continuous matter wave of constant amplitude from a Bose-Einstein Condensate in a shallow optical dipole trap. The process is ...
Plasma Characterization of Pulsed-Laser Ablation Process Used for Fullerene-like CNx Thin Film Deposition
Plasma Characterization Pulsed-Laser Ablation Process Fullerene-like CNx Thin Film Deposition
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2010/10/27
Plasma Characterization of Pulsed-Laser Ablation Process Used for Fullerene-like CNx Thin Film Deposition.
Alloying of AISI 1008 Steel Surfaces by 10ms Nd: YAG Laser Pulses
AISI 1008 Steel Surfaces 10ms Nd laser surface alloying
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2010/4/19
Hardened surfaces were produced on AISI 1008 steel through a laser surface alloying (LSA) technique. Mixture of pure Boron, Silicon, and Carbon powders of the same grain size were deposited on the sub...
Influence of electrical Field on Pulsed Laser beam welding of Stainless Steel (304)
electrical Field Stainless Steel
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2010/4/15
Pulsed laser beam welding experiment were carried out on stainless steel (SUS 304), using vertical and horizontal electric fields of different intensities to study its effectiveness on the welding pro...
Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser
Heteroepitaxial Gex Si1-x/Si(111) Pulsed Nd: YAG Laser
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2010/4/15
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å ar...