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GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
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2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...
A Study of a-Sic/C-Si(n) Isotype Heterojunctions
a-Sic/C-Si(n) Isotype Heterojunctions a-SiC c-Si
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2010/12/15
In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is report...