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Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity
sputtering In2O3 transparent conductive oxide thin films
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2011/5/9
Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF)
sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of
sputtering p...
Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
sputtering In2O3 transparent conductive oxide thin films
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2011/5/6
Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates
by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on
the struct...