搜索结果: 1-1 共查到“光电子材料 Development”相关记录1条 . 查询时间(0.256 秒)
The development of the 1.27 μm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)
Avalanche photodiodes Optical communications
font style='font-size:12px;'>
2015/6/4
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).