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西安电子科技大学电子工程学院模拟电子线路英文课件Chapter2 Diode Applications
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter2 Diode Applications
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2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter2 Diode Applications。
Optical Response Study of the Al/a-Sic:H Schottky Diode for Different Substrate Temperatures of the R.F. Sputtered a-Sic:H Thin Film
Schottky diode Optical sensor Heterojunction Diffusion length
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2010/12/7
In the present work, Schottky diodes of Al/a-SiC:H included in the structure Al/a-SiC:H/c-Si(n)/Al were fabricated and their optical response was studied in the wavelength region from 350 nm up to 100...
A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
Diode characteristic junction parameters linear correlation coefficient
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2010/12/9
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (...
Analysis of the Density of Electron-Hole Pairs for Minimal Pump Energy in a Laser Diode with Coherent Feedback
Density of electron-hole pairs laser diode coherent feedback minimal pump energy
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2010/12/9
The average value in the time domain of the density of electron-hole pairs in a semiconductor laser with coherent feedback is calculated under conditions of minimal pump energy. This value is found to...
Diode Physical Parameters for HEXFETs Characterization of Dose Effect
Dose effects HEXFET diode parameters
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2010/12/9
Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a pr...
An Algorithm to Develop Lumped Model for Gunn-Diode Dynamics
Algorithm lumped model nonlinear dynamics Gunn-Diode
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2010/12/10
A nonlinear lumped model can be developed for Gunn-Diodes to describe the diffusion effects as the domain travels from cathode to anode of a Gunn-Diode. The model describes the domain extinction and n...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
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2010/12/10
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...