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This project report presents the concept, rationale, and results for the environment characterization pertaining to an aircraft communications ground test. The overall objective of this effort was to ...
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin gets sharply eroded because of continuous lowering of device threshold voltage together with ever incr...
This paper illustrates the design steps of a printed circuit board used as test vehicles for the measurement of the electrical properties of carbon nanotube's deposit. The board has been built and use...
A stochastic method is proposed to characterize electromagnetic couplings involving geometrically perturbed transmission lines. A combined exploitation of suitably defined statistical tools is present...
Transparent p-type CuCr1-x Mgx O2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism ...
Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electr...
Growth and Characterization of Crack-free AlGaN on AlN Interlayer     Crack-free AlGaN  AlN Interlayer       font style='font-size:12px;'> 2010/7/15
The AlGaN samples have been grown on AlN interlayer (IL) by metalorganic vapor phase epitaxy (MOVPE). The effects of AlN IL on improvement of crystalline quality of AlGaN and Al incorporation efficien...
The organo-inorganic hybrid material, consisting of Poly(3,4-Ethylene Dioxythiophene) (PEDOT) doped with phosphomolybdate cluster anions [PMo12O40]3− , has been synthesized by direct in situ oxi...
Poly(3,4-ethylene dioxythiophene) (PEDOT) has been inserted between the layers of crystalline V2O5 via the in situ polymerization of EDOT within the framework of the oxyde. The insertion increases the...
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determin...
Non-Linear Characterization of Memoryless SSP Amplifiers     Amplifier  non-linear  characterization and memory       font style='font-size:12px;'> 2010/12/7
This paper describes a testbed, which is able to generate all of the standard test signals used for characterising nonlinear amplifiers. The testbed is shown to be sufficiently linear to avoid any pos...
Embedded capacitor technology can improve electrical performance and reduce assembly cost compared with traditional discrete capacitor technology. Polymerceramic composites have been of great interes...
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiO...
The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enabl...
Diode Physical Parameters for HEXFETs Characterization of Dose Effect     Dose effects  HEXFET  diode parameters       font style='font-size:12px;'> 2010/12/9
Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a pr...

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