搜索结果: 1-15 共查到“电子技术 properties”相关记录20条 . 查询时间(0.109 秒)
Current-scaling in a-Si:H TFT pixel electrode circuit for AM-OLEDs: electrical properties and stability
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2011/11/24
We fabricated and characterized the hydrogenate amorphous-silicon thin-film transistor (a-Si:H TFT) pixelelectrode circuit with the current-scaling function that can be used for active-matrix organic ...
The invariant properties of two-port circuits
circuit regime geometric circuit theory projective geometry two-port
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2010/2/2
Application of projective geometry to the theory of
two-ports and cascade circuits with a load change is considered.
The equations linking the input and output of a two-port
are interpreted as proj...
Spectroscopic Characterization of Electrodeposited Poly(o-toluidine) Thin Films and Electrical Properties of ITO/Poly(o-toluidine)/Aluminum Schottky Diodes
Spectroscopic Characterization Electrodeposited Poly(o-toluidine) Thin Films ITO/Poly(o-toluidine)/Aluminum Schottky Diodes
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2010/12/6
Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electr...
Theory aims to describe fundamental properties of materials（图）
electronic structure nanomaterials
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2007/3/16
Feb. 15, 2007，LIVERMORE, Calif. — Gold is shiny, diamonds are transparent, and iron is magnetic. Why is that?The answer lies with a material ’s electronic structure, which determines its electrical, o...
Properties analysis and solutions of light power equalization for free space communication system using semiconductor laser
light power equalization adaptive power control wireless optical communication
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2010/7/16
starting with the light transmission properties in atmosphere, analyzed the characteristics of light power gain for FSO system, the dynamic range of light power gain was also discussed. A innovation p...
Enhanced Electrical Properties of p-type GaN by Mg Delta Doping
Mg-delta-doping p-type GaN hole mobility hole concentration
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2010/7/16
The Mg-delta-doped GaN structure was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The Hall-effect measurements revealed that the electrical properties were enhanced. A twof...
Structural, Optical and Electrochromic Properties of Sol–Gel V2O5 Thin Films
Optical Properties Electrochromic Sol–Gel Thin Films
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2010/12/7
Vanadium pentoxide thin films are prepared by the sol–gel route by dissolving V2O5 powder (99.5% purity) in H2O2 solution. The solution is spin-coated on glass substrates for optical (UV–VIS–NIR) and ...
A Study on Effect of Line Width, Composition and Firing Temperature on the Microstripline Properties
Fritless thick film paste Microstriplines Transmittance
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2010/12/8
The transmittance and reflectance of microstriplines of different widths, fabricated by thick film and thin film technology are studied in the X and Ku band (8–18 GHz). The fritless thick film Ag past...
Co(II) Optical Absorption in Spinels: Infrared and Ligand-Field Spectroscopic Study of the Ionicity of the bond. Magnetic Structure and Co2+→Fe3+MMCT in Ferrites. Correlation with the Magneto-Optical Properties
Cobalt ferrites optical properties magneto-optical effect
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2010/12/10
The analysis of the infrared and ligand field spectra of COM2O4 spinels reveals that the ionicity of these compounds varies in the following order aluminate > gallate > ferrite and chromite > rhodite ...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
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2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics
Cu In2O3 Sn-Doped In2O3 Ceramics
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2010/12/16
The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect...
Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide
Thermal Treatment Oxygen Pressures Tin-Doped Indium Oxide
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2010/12/16
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy...
Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions
ITO Thin Films RF Cathodic Pulverization Solar Cells Silicon/(RF Sputtered) ITO Junctions
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2010/12/16
ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated...
The Effect of Various Factors on the Resistance and TCR of RuO2 Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature
RuO2 Thick Film Resistors Constituents Glass and Firing Temperature
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2010/12/21
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...
Control of Electrical Properties of RuO2 Thick Film Resistors
Thick-film resistors hybrids ruthenium-dioxide
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2010/12/21
Oxides of various elements have been added to RuO2 thick film resistors and the electrical properties of the resultant resistors have been examined.It is found that almost all the oxides of transition...