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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
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2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
The Effect of Preparation conditions on the Growth Rate of Films, the Yield of Precipitated Powder and the DC Conductivity of Polypyrrole
DC Conductivity Conducting Polymers Polypyrrole Quartz Crystal Microbalance Technique
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2010/4/12
Polypyrrole (PPy) was prepared by a chemical method by using oxidizing agents ferric chloride and potassium persulphate, both as films and pellets. The effect of various variables-such as aging of the...