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We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photo- electro...
Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-...
This work re-defines the well-known C-V (capacitance-voltage)measurement technique, in the view of a new physics formula,discovered in 2006 [1].
Characterization of Thin Film Al/p-CdTe Schottky Diode     Al  p-CdTe  Schottky  C-V  band diagram       font style='font-size:12px;'> 2010/4/9
A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of jun...
Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray...
Highly transparent and conductive thin films of SnO2:F and In2O3:Sn (ITO) have been prepared on glass substrates using the simple pyrolitic (spray) method. Through an exhaustive parameter study and us...
Plasma Characterization of Pulsed-Laser Ablation Process Used for Fullerene-like CNx Thin Film Deposition.
Thin films of Bismuth oxyiodide (BiOI) were deposited, using chemical bath deposition techniques. The films were characterized using energy dispersive x-ray fluorescence (EDXRF) and Fourier transform ...
Mg0.5Cu0.5YxFe2-xO4 ferrites were prepared by the solid state reaction method and were characterized by X-ray diffraction and magnetization measurements. A single spinel phase was obtained in the rang...
The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and e...
Characterization of In4Te3 Single crystals     In4Te3  Hall and Seebeck coefficients  Electrical conductivity       font style='font-size:12px;'> 2010/4/13
Single crystals of In4Te3 grown by modified Bridgman technique were characterized by measurement of the Hall coefficient, electrical conductivity and Seebeck coefficient, in the temperature range 200-...
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, ...
Characterization of Phenanthrene Single Crystals     Phenanthrene Single Crystals  zone refining       font style='font-size:12px;'> 2010/4/15
Single crystals of phenanthrene were successfully grown from melt using Bridgeman Crystal Growth System Type 365. The starting material was purified by sublimation and zone refining techniques in spec...
In this study the structural characteristics of Sb2O3 doped YBa2Cu3O7-x superconductive ceramics are investigated by electrical and XRD analyses. It is determined that, while in undoped specimens the ...

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