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搜索结果: 1-15 共查到知识库 半导体物理学 Semiconductor相关记录22条 . 查询时间(0.06 秒)
The authors consider the problem of wafer temperature control in rapid thermal processing (RTP) of semiconductor wafers. They present a novel approach to the analysis of candidate sensor configuration...
In this paper we are using formal analogy of electromagnetic wave equation and Schr¨odinger equatio in order to study the phenomenon of perfect tunneling (tunneling with unitary transmittance)in 1D se...
Optical cavity cooling of mechanical resonators has recently become a research frontier [1–3]. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force [4] and subs...
The quantum Boltzmann equation, or Fokker-Planck equation, has been used to successfully explain a number of experiments in semiconductor optics in the past two decades. This paper reviews some of the...
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Semiconductor quantum ring as a solid-state spin qubit     Semiconductor quantum ring  solid-state spin qubit       font style='font-size:12px;'> 2010/11/19
The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be init...
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission fr...
Semiconductor superlattices (SL) may be described by a Boltzmann-Poisson kinetic equation with a Bhatnagar-Gross-Krook (BGK) collision term which preserves charge, but not momentum or energy.
This work re-defines the well-known C-V (capacitance-voltage)measurement technique, in the view of a new physics formula,discovered in 2006 [1].
The cross-section of light absorption by size-quantized semiconductor quantum dots (QD) is calculated in the case of a resonance with an exciton Γ6×Γ7 in cubical crystals of Td class. The interference...
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters...
The two-photon absorption process is a nonlinear phenomenon that shows very low optical efficiency in bulk semiconductors. For this reason the detection of these processes becomes very difficult from...
Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic or spin related functions into semiconductor materials and devices. Fe-on-GaAs and MnAs-on-GaAs are c...
This paper discusses the growth and the properties of semiconductor nanostructures based on self-assembled quantum dots (QDs). These QDs confine electrons or excitons in zero-dimension (0D), similar t...
This work reports the influence of a dc external magnetic field on the polaritons propagating in cylindrical systems. We present numerical results for the dispersion relation and energy flow for surfa...

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